CLS3H2731LS-700
Request datasheetCLS3H2731LS-700
Request datasheetS-band internally pre-matched GaN HEMT
The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W internally pre-matched RF GaN HEMTs power transistors that are usable from 2.7 GHz to 3.1 GHz.
Features and benefits
- 700 W internally pre-matched for frequency range from 2.7 GHz to 3.1 GHz RF power GaN HEMT
- High efficiency
- High input impedance
- Low thermal resistance
- Excellent ruggedness
- For RoHS compliance see the product details on the Ampleon website
Applications
- S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency band
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2700 | 3100 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 700 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | 2900 MHz [0] [1] | 50 | V | ||
| PL | output power | 2900 MHz [0] [1] | >700 | W | ||
| Gp | power gain | 2900 MHz [0] [1] | 13 | dB | ||
| ηD | drain efficiency | 2900 MHz [0] [1] | 54 | % | ||
| RLin | input return loss | 2900 MHz [0] [1] | 8 | dB | ||
Package / Packing
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| CLS3H2731LS-700 | ACC-780 (SOT502B) |
sot502b_po | Tray; 20-fold; non-dry pack | Active | Standard Marking |
CLS3H2731LS-700U (9349 605 40112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [2] |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| CLS3H2731LS-700 | 9349 605 40112 | CLS3H2731LS-700U | Mouser | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Bias module for 50 V GaN demonstration boards | Application note | 2015-12-07 | |
| From kW to MW: powering the future of particle acceleration with solid-state technology | Leaflet | 2025-04-14 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-04-17 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-04-17 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Recommended line-up
No documentation available.