S-band internally pre-matched GaN HEMT

The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W internally pre-matched RF GaN HEMTs power transistors that are usable from 2.7 GHz to 3.1 GHz.

Features and benefits

  • 700 W internally pre-matched for frequency range from 2.7 GHz to 3.1 GHz RF power GaN HEMT
  • High efficiency
  • High input impedance
  • Low thermal resistance
  • Excellent ruggedness
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2700 3100 MHz
PL(3dB) nominal output power at 3 dB gain compression 700 W
Test signal: Pulsed CW
VDS drain-source voltage 2900 MHz [0] [1] 50 V
PL output power 2900 MHz [0] [1] >700 W
Gp power gain 2900 MHz [0] [1] 13 dB
ηD drain efficiency 2900 MHz [0] [1] 54 %
RLin input return loss 2900 MHz [0] [1] 8 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLS3H2731L-700 SOT502A
(SOT502A)
sot502a_po Tray; 20-fold; non-dry pack Active Standard Marking CLS3H2731L-700U
(9349 605 39112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source [2]

Recommended line-up

No documentation available.