C5H3438N110D
Request datasheetC5H3438N110D
Request datasheetPower GaN transistor
110 W GaN Doherty RF power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Features and benefits
- Compact 8 mm x 8 mm QFN package
- Optimized for 5G mMIMO application
- High efficiency Doherty configuration
- Designed for broadband operation
- Internally matched for ease of use and compact layout
- Excellent digital pre-distortion capability
Applications
- RF power amplifier for base stations and multi carrier applications in the 3400 MHz to 3800 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3400 | 3800 | MHz | ||
| PL(5dB) | nominal output power at 5 dB gain compression | 110 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | PL(AV) = 17 W [0] | 48 | V | ||
| Gp | power gain | PL(AV) = 17 W [0] | 13.6 | 15 | dB | |
| ηD | drain efficiency | PL(AV) = 17 W [0] | 55 | 62 | % | |
Package / Packing
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C5H3438N110D | QFN-8x8-20-1 (QFN-8x8-20-1) |
qfn-8x8-20-1_po | TR7; 500-fold; 16 mm; dry pack | Active | Standard Marking |
C5H3438N110DZ (9349 606 94515) |
| TR13; 2000-fold; 16 mm; dry pack | Active | Standard Marking |
C5H3438N110DX (9349 606 94525) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1, 5, 9, 11,12, 17 | NC | no connection |
|
|
| 2 | RF_IN_carrier | RF input of carrier | ||
| 3, 7, 8, 18, 19 | NC | no connection | ||
| 4 | RF_IN_peaking | RF input of peaking | ||
| 6 | VGS(peaking) | gate-source voltage of peaking | ||
| 10, 16 | VDS | drain-source voltage | ||
| 13, 14, 15 | RF_OUT | RF output | ||
| 20 | VGS(carrier) | gate-source voltage of carrier |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-02-04 |
Recommended line-up
No documentation available.