Power GaN transistor

110 W GaN Doherty RF power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Features and benefits

  • Compact 8 mm x 8 mm QFN package
  • Optimized for 5G mMIMO application
  • High efficiency Doherty configuration
  • Designed for broadband operation
  • Internally matched for ease of use and compact layout
  • Excellent digital pre-distortion capability

Applications

  • RF power amplifier for base stations and multi carrier applications in the 3400 MHz to 3800 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3400 3800 MHz
PL(5dB) nominal output power at 5 dB gain compression 110 W
Test signal: Pulsed CW
VDS drain-source voltage PL(AV) = 17 W [0] 48 V
Gp power gain PL(AV) = 17 W [0] 13.6 15 dB
ηD drain efficiency PL(AV) = 17 W [0] 55 62 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C5H3438N110D QFN-8x8-20-1
(QFN-8x8-20-1)
qfn-8x8-20-1_po TR7; 500-fold; 16 mm; dry pack Active Standard Marking C5H3438N110DZ1
(9349 606 94515)
TR13; 2000-fold; 16 mm; dry pack Active Standard Marking C5H3438N110DX1
(9349 606 94525)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1, 5, 9, 11,12, 17 NC no connection
2 RF_IN_carrier RF input of carrier
3, 7, 8, 18, 19 NC no connection
4 RF_IN_peaking RF input of peaking
6 VGS(peaking) gate-source voltage of peaking
10, 16 VDS drain-source voltage
13, 14, 15 RF_OUT RF output
20 VGS(carrier) gate-source voltage of carrier

Recommended line-up

No documentation available.