CLP24H4S30P
Download datasheetCLP24H4S30P
Download datasheetRF power GaN-SiC HEMT
30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz.
The CLP24H4S30P is designed for driving high-power CW transistors and is assembled in a high performance DFN package.
Features and benefits
- High efficiency
- Ultra-small external matching circuit
- Designed for broadband operation (2400 MHz to 2500 MHz)
- Internally input matched
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking; industrial, scientific and medical applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2400 | 2500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 30 | W | |||
| Test signal: CW | ||||||
| VDS | drain-source voltage | 2400 to 2500 MHz [0] | 50 | V | ||
| Gp | power gain | 2400 to 2500 MHz [0] | 17 | dB | ||
| ηD | drain efficiency | 2400 to 2500 MHz [0] | 75 | % | ||
| PL(AV) | average output power | 2400 to 2500 MHz [0] | 25 | W | ||
| IDq | quiescent drain current | 2400 to 2500 MHz [0] | 20 | mA | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| CLP24H4S30P | DFN-7x6.5-6-1 (DFN-7x6.5-6-1) |
dfn-7x6.5-6-1_po | TR7, 1000-fold, 16mm, Dry Pack | Active | Standard Marking |
CLP24H4S30PZ (9349 607 09515) |
|
| TR7, 100-fold, 16mm, Dry Pack | Active | Standard Marking |
CLP24H4S30PXY (9349 607 09538) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | gate1 | gate 1 |
|
|
| 2 | n.c. | not connected | ||
| 3 | gate2 | gate 2 | ||
| 4 | drain2 | drain 2 | ||
| 5 | n.c. | not connected | ||
| 6 | drain1 | drain 1 |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| RF power GaN-SiC HEMT | Data sheet | 2024-07-23 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Measurement results of 2.4-2.5 GHz amplifier with the CLP24H4S30P | Report | 2023-07-07 | |
| Measurement results of 2.4-2.5 GHz line-up with the CLF24H4LS300P and CLP24H4S30P driver | Report | 2024-03-05 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) CLP24H4S30P (Data sheet) | Design support | 2024-07-23 | |
| CLP24H4S30P Model for ADS (Keysight Advanced Design System) | Simulation model | 2024-07-23 |