This product has been discontinued. Click here for discontinuation information.
The replacement is: BLF647P

UHF power LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range

Applications

  • Communication transmitter applications in the HF to 800 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 800 MHz
PL(1dB) nominal output power at 1 dB gain compression 150 W
Test signal: CW
Gp power gain PL = 150 W; VDS = 32 V; f = 800 MHz 12.5 dB
ηD drain efficiency PL = 150 W; VDS = 32 V; f = 800 MHz; IDq = 1000 mA 60 %
PL output power f = 800 MHz; VDS = 32 V 150 W

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF647 SOT540A
(SOT540A)
sot540a_po Bulk Pack Withdrawn Standard Marking BLF647,112
(9340 564 98112)

Discontinuation information

Type number Ordering code (12NC) Orderable part number LTB LTD Replacement DN notice Product status Comments
BLF647 9340 564 98112 BLF647,112 2014-03-31 2014-06-30 BLF647P 201306022DN Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF647 9340 564 98112 BLF647,112 DigiKey Buy Not available
RFMW Buy

No documentation available.