Broadband power LDMOS transistor
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Features and benefits
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Communication transmitter applications in the HF to 1500 MHz frequency range
- Industrial applications in the HF to 1500 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 1500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 200 | W | |||
| Test signal: Pulsed RF | ||||||
| Gp | power gain | VDS = 32 V | 18 | dB | ||
| ηD | drain efficiency | VDS = 32 V; f = 1300 MHz; IDq = 0.1 A | 70 | % | ||
| PL(M) | peak output power | 200 | W | |||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF647P | CDFM4 (SOT1121A) |
sot1121a_po | Bulk Pack | Active | Standard Marking |
BLF647P,112 (9340 668 56112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLF647P | 9340 668 56112 | BLF647P,112 | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLF647P | 9340 668 56112 | BLF647P,112 | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Broadband power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Measurement results of BLF647P in Board #AR212016 tuned for 30-520 MHz band at 28 V | Report | 2022-04-26 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF647P (Data sheet) | Design support | 2013-09-20 | |
| BLF647P(S) Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-03-17 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |