Power LDMOS transistor
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 450 MHz.
Features and benefits
- High breakdown voltage enables class E operation at VDS = 48 V
- Suitable for VDS = 50 V and 55 V
- Qualified up to a maximum of VDS = 55 V
- Characterized from 30 V to 55 V for extended power range
- Easy power control
- Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
- Excellent ruggedness with no device degradation
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
- For RoHS compliance see the product details on the Ampleon website
Applications
- Industrial, scientific and medical applications
- Plasma generators
- MRI systems
- Particle accelerators
- Broadcast
- FM radio
- VHF TV
- Communications
- Non cellular communications
- UHF radar
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 450 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1600 | W | |||
| Test signal: Pulsed RF | ||||||
| VDS | drain-source voltage | PL = 1600 W [0] | 55 | V | ||
| Gp | power gain | PL = 1600 W [0] | 26.1 | 27.3 | dB | |
| RLin | input return loss | PL = 1600 W [0] | -14.5 | dB | ||
| ηD | drain efficiency | PL = 1600 W [0] | 71 | 74.2 | % | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| ART1K6PH | OMP-1230-4F-1 (OMP-1230-4F-1) |
omp-1230-4f-1_po | Tray, 20-fold; dry pack | Active | Standard Marking |
ART1K6PHZ (9349 607 47517) |
|
| TR13; 100-fold; 56 mm; dry pack | Active | Standard Marking |
ART1K6PHY (9349 607 47518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G1 | gate1 |
|
|
| 2 | G2 | gate2 | ||
| 3 | D2 | drain2 | ||
| 4 | D1 | drain1 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Thermal characteristics of ART LDMOS power transistors | Application note | 2023-03-01 | |
| Power LDMOS transistor | Data sheet | 2024-07-23 | |
| ART1K6PH demo for 352 MHz 1350 W CW power amplifier | Report | 2020-10-26 | |
| Measurement results of the ART1K6PH at 325 MHz | Report | 2020-02-28 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Recommended line-up
Design support
| Title | Type | Date | |
|---|---|---|---|
| ART1K6PH Model for ADS (Keysight Advanced Design System) | Simulation model | 2024-07-29 | |
| ART1K6PH 50V 100mA S-parameter Data | S-parameter | 2024-07-29 | |
| Printed-Circuit Board (PCB) ART1K6PH(G) (Data sheet) | Design support | 2024-07-23 | |
| ART1K6PH Model for Cadence AWR Microwave Office® | Simulation model | 2024-07-29 | |
| ART1K6PH Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2024-07-29 | |
| ART1K6PH(G) Foster Thermal Transient Impedance Model | Simulation model | 2024-07-29 | |
| ART1K6PH(G) Cauer Thermal Transient Impedance Model | Simulation model | 2024-07-29 | |
| ART1K6PH SPICE Model | Simulation model | 2024-10-22 |