This device has been transferred from Ampleon to Flip Electronics.

UHF power LDMOS transistor

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits

  • Easy power control
  • Excellent reliability
  • Integrated ESD protection
  • High power gain
  • High efficiency
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding RoHS

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF881

UHF power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 140 W
Test signal: CW
Gp power gain VDS = 50 V 20 21 dB
ηD drain efficiency VDS = 50 V; f = 860 MHz; IDq = 0.5 A 45 49 %
PL(PEP) peak envelope power VDS = 50 V 140 W
IMD3 third-order intermodulation distortion VDS = 50 V; IDq = 0.5 A -34 -30 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF881 SOT467C
(SOT467C)
sot467c_po Bulk Pack Transferred Standard Marking BLF881,112
(9340 639 47112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF881 9340 639 47112 BLF881,112 Flip Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF881 9340 639 47112 BLF881,112 Flip Electronics Buy Not available