Power GaN transistor

10 W GaN packaged power transistor for base station applications.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in applications
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 1800 MHz to 5000 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1800 5000 MHz
PL(5dB) nominal output power at 5 dB gain compression 10 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 50 V
Gp power gain PL = 27.5 dBm [0] 14.3 15.8 dB
ηD drain efficiency PL = 27.5 dBm [0] 9 13 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C5H2350N10 DFN-4.5x4-6-1
(DFN-4.5x4-6-1)
dfn-4.5x4-6-1_po TR13; 3000-fold; 12 mm; dry pack Active Standard Marking C5H2350N10Z
(9349 606 91515)
TR7; 1000-fold; 12 mm; dry pack Active Standard Marking C5H2350N10X
(9349 606 91525)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 n.c. not connected
2 gate gate
3 n.c. not connected
4 n.c. not connected
5 drain drain
6 n.c. not connected

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C5H2350N10 9349 606 91515 C5H2350N10Z DigiKey Buy Not available
RFMW Buy
C5H2350N10 9349 606 91525 C5H2350N10X DigiKey Buy Request samples

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C5H2350N10 9349 606 91515 C5H2350N10Z DigiKey Buy Not available
RFMW Buy
C5H2350N10 9349 606 91525 C5H2350N10X DigiKey Buy Request samples

No documentation available.