BLF6G27-10G
Download datasheetBLF6G27-10G
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
WiMAX power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz
Features and benefits
- Qualified up to a maximum VDS operation of 32 V
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
- Internally matched for ease of use
- Low gold plating thickness on leads
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for base stations and multi carrier applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 10 | W | |||
| Test signal: NCDMA/IS95 | ||||||
| Gp | power gain | PL(AV) = 2 W; VDS = 28 V | 17.5 | 19 | dB | |
| RLin | input return loss | PL(AV) = 2 W; VDS = 28 V; IDq = 130 mA | -10 | dB | ||
| ηD | drain efficiency | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA | 18 | 20 | % | |
| PL(AV) | average output power | 2 | W | |||
| ACPR1980k | adjacent channel power ratio (1980 kHz) | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA [0] | -64 | -61 | dBc | |
| ACPR885k | adjacent channel power ratio (885 kHz) | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA [0] | -49 | -46 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G27-10G | CDFM2 (SOT975C) |
sot975c_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF6G27-10G,118 (9340 618 45118) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF6G27-10G,112 (9340 618 45112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| WiMAX power LDMOS transistor | Data sheet | 2015-09-01 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Printed-Circuit Board (PCB) BLF6G27-10(G) (Data sheet) | Design support | 2015-09-01 |