BLF6G27-10
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G27-10
Download datasheetWiMAX power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz
Features and benefits
- Qualified up to a maximum VDS operation of 32 V
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
- Internally matched for ease of use
- Low gold plating thickness on leads
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for base stations and multi carrier applications
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2300 | 2700 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 10 | W | |||
Test signal: NCDMA/IS95 | ||||||
Gp | power gain | PL(AV) = 2 W; VDS = 28 V | 17.5 | 19 | dB | |
RLin | input return loss | PL(AV) = 2 W; VDS = 28 V; IDq = 130 mA | -10 | dB | ||
ηD | drain efficiency | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA | 18 | 20 | % | |
PL(AV) | average output power | 2 | W | |||
ACPR1980k | adjacent channel power ratio (1980 kHz) | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA [0] | -64 | -61 | dBc | |
ACPR885k | adjacent channel power ratio (885 kHz) | PL(AV) = 2 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 130 mA [0] | -49 | -46 | dBc |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLF6G27-10 | CDFM2 (SOT975B) |
sot975b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G27-10,118 (9340 618 44118) |
|
Bulk Pack | Withdrawn | Standard Marking |
BLF6G27-10,112 (9340 618 44112) |
Discontinuation information
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D | drain | ||
2 | G | gate | ||
3 | S | source |
Documentation
Title | Type | Date | |
---|---|---|---|
WiMAX power LDMOS transistor | Data sheet | 2015-09-01 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) BLF6G27-10(G) (Data sheet) | Design support | 2015-09-01 |