BLC8G24LS-241AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G24LS-241AV
Download datasheetPower LDMOS transistor
240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Features and benefits
- Excellent ruggedness
- High-efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation (2300 MHz to 2400 MHz)
- Asymmetric design to achieve optimum efficiency across the band
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2400 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 240 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 56 W; [0] | 13.3 | 14.5 | dB | |
| RLin | input return loss | PL(AV) = 56 W; [0] | -10 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 56 W; [0] | 38 | 43 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 56 W; [0] | -29 | -25 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G24LS-241AV | DFM8 (SOT1252-1) |
sot1252-1_po | Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC8G24LS-241AVZ (9340 695 37517) |
|
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC8G24LS-241AVY (9340 695 37518) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
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| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source | ||
| 6 | VDM | video decoupling (main) | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | VDP | video decoupling (peak) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2016-12-02 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| BLC8G24LS-241AV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-27 | |
| Printed-Circuit Board (PCB) BLC8G24LS-241AV (Data sheet) | Design support | 2018-04-23 |