B11G2327N70D
Download datasheet This product has been discontinued.Click here for discontinuation information.
B11G2327N70D
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: B11G2327N71D
The replacement is: B11G2327N71D
LDMOS 2-stage integrated Doherty MMIC
The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- 20 Ω output impedance thanks to integrated pre-match
- High linearity
- Designed for large RF and instantaneous bandwidth operation
- Independent control of carrier and peaking bias
- Integrated bias gate switch
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- Macrocell base station driver
- Microcell base station
- 5G mMIMO
- W-CDMA/LTE
- Active antenna
- General purpose applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 80 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | [0] [1] | 28 | V | ||
| Gp | power gain | PL = 5 W (37 dBm) [0] [1] | 27.5 | 30 | 33.5 | dB |
| ηD | drain efficiency | PL = PL(3dB) [0] [1] | 46 | 54 | % | |
| ηD | drain efficiency | PL = 5 W (37 dBm) [0] [1] | 16 | 22 | % | |
| RLin | input return loss | [0] [1] | -15 | -10 | dB | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| B11G2327N70D | PQFN 12x7 (PQFN-12x7-36-1) |
pqfn-12x7-36-1_po | TR13; 1500-fold; 24 mm; dry pack | Discontinued | Standard Marking |
B11G2327N70DX (9349 604 69525) |
|
| TR7; 300-fold; 24 mm; dry pack | Discontinued | Standard Marking |
B11G2327N70DYZ (9349 604 69535) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| B11G2327N70D | 9349 604 69525 | 2023-10-30 | 2023-10-31 | B11G2327N71D | 202310003DN | Full Withdrawal | |
| B11G2327N70D | 9349 604 69535 | 2023-10-30 | 2023-10-31 | B11G2327N71D | 202310003DN | Full Withdrawal |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | GND | ground |
|
|
| 2 | VDS2_A/decoupling | drain-source voltage of final stages of section A | ||
| 3 | c.t.g. | connect to ground | ||
| 4 | VGS(carr) | gate-source voltage of carrier | ||
| 5 | VGS(peak) | gate-source voltage of peaking | ||
| 6 | VDS1_A | drain-source voltage of driver stages of section A | ||
| 7 | GND | ground | ||
| 8 | n.c. | not connected | ||
| 9 | PA_e | PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW | ||
| 10 | VDD(5V) | supply voltage (5 V) | ||
| 11 | GND | ground | ||
| 12 | RF_IN_A | RF input of section A | ||
| 13 | GND | ground | ||
| 14 | RF_IN_B | RF input of section B | ||
| 15 | GND | ground | ||
| 16 | VDD(5V) | supply voltage (5 V) | ||
| 17 | PA_e | PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW | ||
| 18 | n.c. | not connected | ||
| 19 | GND | ground | ||
| 20 | VDS1_B | drain-source voltage of driver stages of section B | ||
| 21 | VGS(peak) | gate-source voltage of peaking | ||
| 22 | VGS(carr) | gate-source voltage of carrier | ||
| 23 | c.t.g. | connect to ground | ||
| 24 | VDS2_B/decoupling | drain-source voltage of final stages of section B | ||
| 25 | GND | ground | ||
| 26, 27, 28, 29, 30 | RF_OUT_B | RF output of section B | ||
| 31 | GND | ground | ||
| 32, 33, 34, 35, 36 | RF_OUT_A | RF output of section A |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2022-04-07 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) B11G2327N70D (Data sheet) | Design support | 2022-01-19 |