Power GaN transistor

400 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Features and benefits

  • Excellent digital pre-distortion capability 
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications 
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 1800 MHz to 2200 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1800 2200 MHz
PL(5dB) nominal output power at 5 dB gain compression 290 W
Test signal: 1-c W-CDMA
VDS drain-source voltage f = 1805 MHz to 1880 MHz [0] 48 V
Gp power gain f = 1805 MHz to 1880 MHz [0] 16 dB
ηD drain efficiency f = 1805 MHz to 1880 MHz [0] 60.1 %
IDq quiescent drain current f = 1805 MHz to 1880 MHz [0] 80 mA
ACPR adjacent channel power ratio f = 1805 MHz to 1880 MHz [0] -30 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H22P400A OMP-780-4F-1
(OMP-780-4F-1)
omp-780-4f-1_po TR13; 100-fold; 44 mm; dry pack Active Standard Marking C4H22P400AY
(9349 607 60518)
TR13; 300-fold; 44 mm; dry pack Active Standard Marking C4H22P400AYZ
(9349 607 60535)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate1 (carrier)
2 G2 gate2 (peaking)
3 D2 drain2 (peaking)
4 D1 drain1 (carrier)
5 S source

Recommended line-up

No documentation available.