Power GaN transistor

400 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Features and benefits

  • Excellent digital pre-distortion capability 
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications 
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 1800 MHz to 2200 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1800 2200 MHz
PL(5dB) nominal output power at 5 dB gain compression 290 W
Test signal: 1-c W-CDMA
VDS drain-source voltage f = 1805 MHz to 1880 MHz [0] 48 V
Gp power gain f = 1805 MHz to 1880 MHz [0] 16 dB
ηD drain efficiency f = 1805 MHz to 1880 MHz [0] 60.1 %
IDq quiescent drain current f = 1805 MHz to 1880 MHz [0] 80 mA
ACPR adjacent channel power ratio f = 1805 MHz to 1880 MHz [0] -30 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H22P400A OMP-780-4F-1
(OMP-780-4F-1)
omp-780-4f-1_po TR13; 100-fold; 44 mm; dry pack Active Standard Marking C4H22P400AY
(9349 607 60518)
TR13; 300-fold; 44 mm; dry pack Active Standard Marking C4H22P400AYZ
(9349 607 60535)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate1 (carrier)
2 G2 gate2 (peaking)
3 D2 drain2 (peaking)
4 D1 drain1 (carrier)
5 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C4H22P400A 9349 607 60518 C4H22P400AY RFMW Buy Not available
C4H22P400A 9349 607 60535 C4H22P400AYZ RFMW Buy Not available

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No documentation available.