BLM9D1822S-60PBG
Download datasheetBLM9D1822S-60PBG
Download datasheetLDMOS 2-stage integrated Doherty MMIC
The BLM9D1822S-60PBG is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. For each section, the carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- High efficiency
- Designed for broadband operation (frequency 1800 MHz to 2200 MHz)
- High section-to-section isolation enabling multiple combinations
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Excellent thermal stability
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1800 MHz to 2200 MHz frequency range. Possible circuit topologies are the following:
- Dual section or single ended
- Quadrature combined
- Push-pull
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 60 | W | |||
| Test signal: 1-c LTE 20 MHz | ||||||
| VDS | drain-source voltage | 1960 MHz [0] | 28 | V | ||
| PL(AV) | average output power | 1960 MHz [0] | 3.16 | W | ||
| Gp | power gain | 1960 MHz [0] | 28.7 | dB | ||
| ηD | drain efficiency | 1960 MHz [0] | 22.8 | % | ||
| ACPR20M | adjacent channel power ratio (20 MHz) | 1960 MHz [0] | -44.1 | dBc | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM9D1822S-60PBG | OMP-780-16G-1 (OMP-780-16G-1) |
omp-780-16g-1_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLM9D1822S-60PBGY (9349 602 29518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS(A1) | drain-source voltage of driver stage of section A |
|
|
| 2 | VGS(A_P) | gate-source voltage of peaking of section A | ||
| 3 | VGS(A_C) | gate-source voltage of carrier of section A | ||
| 4 | RF_IN_A | RF input section A | ||
| 5 | n.c. | not connected | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | RF_IN_B | RF input section B | ||
| 12 | VGS(B_C) | gate-source voltage of carrier of section B | ||
| 13 | VGS(B_P) | gate-source voltage of peaking of section B | ||
| 14 | VDS(B1) | drain-source voltage of driver stages of section B | ||
| 15 | RF_OUT_B/VDS(B2) | RF output section B / drain-source voltage of final stages of section B | ||
| 16 | RF_OUT_A/VDS(A2) | RF output section A / drain-source voltage of final stages of section A | ||
| flange | GND | RF ground |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM9D1822S-60PBG | 9349 602 29518 | BLM9D1822S-60PBGY | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM9D1822S-60PBG | 9349 602 29518 | BLM9D1822S-60PBGY | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2021-04-16 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM9D1822S-60PBG (Data sheet) | Design support | 2019-04-25 |