BLF6H10LS-160
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6H10LS-160
Download datasheetPower LDMOS transistor
A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Features and benefits
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding RoHS
- Low Rth providing excellent thermal stability
- Low output capacitance for wideband performance in Doherty applications
- Low memory effects providing excellent digital pre-distortion capability
- No internal matching for broadband applications
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations.
- Multi carrier applications in the 729 MHz to 960 MHz frequency range.
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 729 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 160 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 38 W; VDS = 50 V | 18.8 | 20 | dB | |
| RLin | input return loss | PL(AV) = 38 W; VDS = 50 V; IDq = 600 mA | -12 | -6 | dBc | |
| ηD | drain efficiency | PL(AV) = 38 W; VDS = 50 V; f = 960 MHz; IDq = 600 mA | 29 | 34 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 38 W; VDS = 50 V; f = 960 MHz; IDq = 600 mA | -32 | -27 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6H10LS-160 | SOT467B (SOT467B) |
sot467b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6H10LS-160,118 (9340 656 58118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6H10LS-160,112 (9340 656 58112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF6H10L(S)-160 (Data sheet) | Design support | 2012-12-04 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLF6H10L-160 Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-28 |