BLF888
Download datasheetUHF power LDMOS transistor
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.
Features and benefits
- 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:
- Peak envelope power load power = 500 W
- Power gain = 19 dB
- Drain efficiency = 46 %
- Third order intermodulation distortion = -32 dBc
- DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:
- Average output power = 110 W
- Power gain = 19 dB
- Drain efficiency = 31 %
- Shoulder distance = -31 dBc (4.3 MHz from center frequency)
- Integrated ESD protection
- Advanced flange material for optimum thermal behavior and reliability
- Excellent ruggedness
- High power gain
- High efficiency
- Designed for broadband operation (470 MHz to 860 MHz)
- Excellent reliability
- Internal input matching for high gain and optimum broadband operation
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- Communication transmitter applications in the UHF band
- Industrial applications in the UHF band
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 470 | 860 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 500 | W | |||
| Test signal: 2-Tone, class AB | ||||||
| Gp | power gain | VDS = 50 V | 18 | 19 | dB | |
| ηD | drain efficiency | VDS = 50 V; f = 860 MHz; IDq = 1.3 A | 42 | 46 | % | |
| PL(AV) | average output power | 250 | W | |||
| PL(PEP) | peak envelope power | 500 | W | |||
| IMD3 | third-order intermodulation distortion | VDS = 50 V; IDq = 1.3 A | -32 | -28 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF888 | CDFM2 (SOT979A) |
sot979a_po | Bulk Pack | Withdrawn | Standard Marking |
BLF888,112 (9340 621 01112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
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| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| UHF power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF888 (Data sheet) | Design support | 2012-05-14 |