This product has been discontinued. Click here for discontinuation information.

Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange.

Features and benefits

  • Emitter ballasting resistors improve ruggedness
  • Gold metallization ensures excellent reliability
  • Interdigitated emitter-base structure provides high emitter efficiency
  • Internal input and output matching networks for an easy circuit design
  • Multicell geometry improves power sharing and reduces thermal resistance
  • Suitable for short and medium pulse applications

Applications

  • Common base class-C pulsed power amplifiers
  • Radar applications in the 2.7 to 3.1 GHz band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2700 3100 MHz
Mode of operation: Class-C; tp = 100 μs; δ = 10 %
Gp power gain 7.5 dB
PL output power 110 W
ηC collector efficiency 35 %

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS2731-110 CDFM2
(SOT423A)
sot423a_po Trade pack Withdrawn Standard Marking BLS2731-110,114
(9340 457 80114)

Discontinuation information

Type number Ordering code (12NC) Orderable part number LTB LTD Replacement DN notice Product status Comments
BLS2731-110 9340 457 80114 BLS2731-110,114 2011-03-31 2011-06-30 Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 C collector
2 E emitter
3 B base

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS2731-110 9340 457 80114 BLS2731-110,114 RFMW Buy Not available

No documentation available.