BLF6G27LS-50BN
Power LDMOS transistor
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2500 MHz to 2700 MHz)
- Intergrated current sense
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- RF power amplifiers for W-CDMA base stations and multicarrier applications
Downloads
No downloads available.Design tool
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2500 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 50 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 3 W; VDS = 28 V [0] | 15.3 | 16.5 | dB | |
| ηD | drain efficiency | PL(AV) = 3 W; VDS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; IDq = 430 mA [0] | 12.5 | 14.5 | % | |
| PL(AV) | average output power | [0] | 3 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 3 W; VDS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; IDq = 430 mA [0] | -47 | -43 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G27LS-50BN | CDFM6 (SOT1112B) |
sot1112b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G27LS-50BN,118 (9340 646 87118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G27LS-50BN,112 (9340 646 87112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | SD | sense drain | ||
| 5 | SD | sense drain | ||
| 6 | SG | sense gate | ||
| 7 | SG | sense gate |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
No documentation available.