BLC9G24XS-170AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC9G24XS-170AV
Download datasheetPower LDMOS transistor
170 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2400 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 170 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 28 W [0] | 30 | V | ||
| Gp | power gain | PL(AV) = 28 W [0] | 15.5 | dB | ||
| ηD | drain efficiency | PL(AV) = 28 W [0] | 47 | % | ||
| PL(AV) | average output power | PL(AV) = 28 W [0] | 28 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 28 W [0] | -30 | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9G24XS-170AV | DFM6 (SOT1275-1) |
sot1275-1_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLC9G24XS-170AVY (9349 600 37518) |
|
| Tray, NonBakeable, Multiple in Drypack | Withdrawn | Standard Marking |
BLC9G24XS-170AVZ (9349 600 37517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain 1 (main) |
|
|
| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate 1 (main) | ||
| 4 | G2 | gate 2 (peak) | ||
| 5 | VD | video decoupling (main) | ||
| 6 | VD | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Power LDMOS transistor | Data sheet | 2017-05-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9G24XS-170AV (Data sheet) | Design support | 2018-04-26 |