BLC8G27LS-60AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G27LS-60AV
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLM9D2327S-50PB
The replacement is: BLM9D2327S-50PB
Power LDMOS transistor
60 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2300 MHz to 2690 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for LTE base stations and multi carrier applications in the 2300 MHz to 2690 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2690 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 60 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | VDS = 28 V; PL(AV) = 7 W [0] | 13.8 | 15 | dB | |
| ηD | drain efficiency | VDS = 28 V; PL(AV) = 7 W [0] | 40 | 44 | % | |
| ACPR | adjacent channel power ratio | VDS = 28 V; PL(AV) = 7 W [0] | -28 | -23 | dBc | |
| RL in | input return loss | VDS = 28 V; PL(AV) = 7 W [0] | -10 | -7 | dB | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G27LS-60AV | DFM6 (SOT1275-3) |
sot1275-3_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLC8G27LS-60AVY (9340 692 59518) |
|
| Tray, NonBakeable, Multiple in Drypack | Withdrawn | Standard Marking |
BLC8G27LS-60AVZ (9340 692 59517) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| BLC8G27LS-60AV | 9340 692 59518 | 2021-12-31 | 2022-03-31 | BLM9D2327S-50PB | 202107006DN | Full Withdrawal | |
| BLC8G27LS-60AV | 9340 692 59517 | 2021-12-31 | 2022-03-31 | BLM9D2327S-50PB | 202107006DN | Full Withdrawal |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 (main) |
|
|
| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate1 (main) | ||
| 4 | G2 | gate2 (peak) | ||
| 5 | VDM | video decoupling (main) | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2016-12-02 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC8G27LS-60AV(H) (Data sheet) | Design support | 2015-09-25 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLC8G27LS-60AV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-27 |