BLC8G27LS-180AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G27LS-180AV
Download datasheetPower LDMOS transistor
180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Low thermal resistance providing excellent thermal stability
- Integrated ESD protection
- Designed for low memory effects providing excellent pre-distortability
- Lower output capacitance for improved performance in Doherty applications
- Asymmetrical design to achieve optimal efficiency across the band
- Decoupling leads to enable improved video bandwidth
- Internally matched for ease of use (input and output)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2496 MHz to 2690 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2496 | 2690 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 180 | W | |||
Test signal: 1-c W-CDMA | ||||||
Gp | power gain | PL(AV) = 28 W; VDS = 28 V | 13 | 14 | dB | |
RLin | input return loss | PL(AV) = 28 W; VDS = 28 V; IDq = 200 mA | -10 | -7 | dB | |
ηD | drain efficiency | PL(AV) = 28 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 200 mA | 39.5 | 43.5 | % | |
ACPR | adjacent channel power ratio | PL(AV) = 28 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 200 mA | -30 | -26 | dBc |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLC8G27LS-180AV | DFM6 (SOT1275-1) |
sot1275-1_po | Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC8G27LS-180AVZ (9340 685 78517) |
|
Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC8G27LS-180AVY (9340 685 78518) |
Discontinuation information
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D1 | drain1 (main) | ||
2 | D2 | drain2 (peak) | ||
3 | G1 | gate1 (main) | ||
4 | G2 | gate2 (peak) | ||
5 | VDM | video decoupling (main) | ||
6 | VDP | video decoupling (peak) | ||
7 | S | source |
Documentation
Title | Type | Date | |
---|---|---|---|
Power LDMOS transistor | Data sheet | 2017-05-24 | |
Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) BLC8G27LS-180AV (Data sheet) | Design support | 2015-01-06 | |
BLC8G27LS-180AV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-27 |