BLC8G27LS-160AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G27LS-160AV
Download datasheetPower LDMOS transistor
160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2496 MHz to 2690 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2496 | 2690 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 160 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 31.6 W; VDS = 28 V | 13.3 | 14.3 | dB | |
| RLin | input return loss | PL(AV) = 31.6 W; VDS = 28 V; IDq = 250 mA | -13 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 31.6 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA | 36 | 41 | % | |
| PL(M) | peak output power | 146 | 170 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 31.6 W; VDS = 28 V; 2496 MHz < f < 2690 MHz; IDq = 250 mA | -30 | -25 | dBc | |
| PARO | output peak-to-average ratio | PL(AV) = 63 W | 3.75 | 4.7 | dB | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G27LS-160AV | DFM6 (SOT1275-1) |
sot1275-1_po | Reel 13" Q1/T1 | Discontinued | Standard Marking |
BLC8G27LS-160AVJ (9340 678 22118) |
|
| Bulk Pack | Discontinued | Standard Marking |
BLC8G27LS-160AVU (9340 678 22112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 (main) |
|
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| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate1 (main) | ||
| 4 | G2 | gate2 (peak) | ||
| 5 | VDM | video decoupling (main) | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-05-24 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC8G27LS-160AV (Data sheet) | Design support | 2014-04-10 |