B11G2327N72D
Request datasheetB11G2327N72D
Request datasheetLDMOS 2-stage integrated Doherty MMIC
The B11G2327N72D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 2300 MHz to 2700 MHz. Available in PQFN outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- High linearity / efficiency
- Designed for large RF and instantaneous bandwidth operation
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- Macrocell base station driver
- Microcell base station
- 5G mMIMO
- W-CDMA/LTE
- Active antenna
- General purpose applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 89 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | f = 2600 MHz [0] [1] | 28 | V | ||
| PL(AV) | average output power | f = 2600 MHz [0] [1] | 4 | W | ||
| Gp | power gain | f = 2600 MHz [0] [1] | 31.2 | dB | ||
| ηD | drain efficiency | f = 2600 MHz [0] [1] | 30.4 | % | ||
| ACPR5M | adjacent channel power ratio (5 MHz) | f = 2600 MHz [0] [1] | -40 | dBc | ||
Package / Packing
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| B11G2327N72D | PQFN 12x7 (PQFN-12x7-36-1) |
pqfn-12x7-36-1_po | TR13; 1500-fold; 24 mm; dry pack | Active | Standard Marking |
B11G2327N72DX (9349 610 10525) |
| TR7; 300-fold; 24 mm; dry pack | Active | Standard Marking |
B11G2327N72DYZ (9349 610 10535) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | GND | ground |
|
|
| 2 | decoupling_A | video-lead for decoupling of section A | ||
| 3 | n.c. | not connected [2] | ||
| 4 | VGS(carrier) | gate-source voltage of carrier [3] | ||
| 5 | VGS(peaking) | gate-source voltage of peaking [4] | ||
| 6 | VDS1_A | drain-source voltage of driver stages of section A [5] | ||
| 7 | GND | ground | ||
| 8 | n.c. | not connected | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | GND | ground | ||
| 12 | RF_IN_A | RF input of section A | ||
| 13 | GND | ground | ||
| 14 | RF_IN_B | RF input of section B | ||
| 15 | GND | ground | ||
| 16 | n.c. | not connected | ||
| 17 | n.c. | not connected | ||
| 18 | n.c. | not connected | ||
| 19 | GND | ground | ||
| 20 | VDS1_B | drain-source voltage of driver stages of section B [5] | ||
| 21 | VGS(peaking) | gate-source voltage of peaking [4] | ||
| 22 | VGS(carrier) | gate-source voltage of carrier [3] | ||
| 23 | n.c. | not connected | ||
| 24 | decoupling_B | video-lead for decoupling of section B | ||
| 25 | GND | ground | ||
| 26, 27, 28, 29, 30 | RF_OUT_B/VDS2_B | RF output of section B/drain-source voltage of driver stages of section B | ||
| 31 | GND | ground | ||
| 32, 33, 34, 35, 36 | RF_OUT_A/VDS2_A | RF output of section A/drain-source voltage of driver stages of section A |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-02-04 |
No documentation available.