BLM8D1822S-50PBG
Download datasheetBLM8D1822S-50PBG
Download datasheetLDMOS 2-stage integrated Doherty MMIC
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- High efficiency
- Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
- High section-to-section isolation enabling multiple combinations
- Integrated temperature compensated bias
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Excellent thermal stability
- Source impedance 50 Ω; high power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
- Dual section or single ended
- Quadrature combined
- Push-pull
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 50 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | f = 1807.5 MHz [0] | 26 | dB | ||
| Gp | power gain | f = 2167.5 MHz [0] | 24.5 | 26.5 | 28.5 | dB |
| RLin | input return loss | f = 2167.5 MHz [0] | -19 | -10 | dB | |
| ηD | drain efficiency | f = 2167.5 MHz [0] | 31 | 37 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | f = 2167.5 MHz [0] | -34 | -26 | dBc | |
| PARO | output peak-to-average ratio | f = 2167.5 MHz [0] | 6.7 | 7.8 | dB | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM8D1822S-50PBG | SOT1212-3 (SOT1212-3) |
sot1212-3_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLM8D1822S-50PBGY (9340 698 91518) |
|
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLM8D1822S-50PBGY (9349 601 10518) |
The variants in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM8D1822S-50PBG | SOT1212-3 (SOT1212-3) |
sot1212-3_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM8D1822S-50PBGZ (9349 601 10535) |
|
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM8D1822S-50PBGYZ (9349 601 25535) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS(A1) | drain-source voltage of driver stages of section A |
|
|
| 2 | VGS(A_P) | gate-source voltage of peaking A_P | ||
| 3 | VGS(A_C) | gate-source voltage of carrier A_C | ||
| 4 | RF_IN_A | RF input section A | ||
| 5 | n.c. | not connected | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | RF_IN_B | RF input section B | ||
| 12 | VGS(B_C) | gate-source voltage of carrier B_C | ||
| 13 | VGS(B_P) | gate-source voltage of peaking B_P | ||
| 14 | VDS(B1) | drain-source voltage of driver stages of section B | ||
| 15 | RF_OUT_B/VDS(B2) | RF output section B / drain-source voltage of final stages of section B | ||
| 16 | RF_OUT_A/VDS(A2) | RF output section A / drain-source voltage of final stages of section A | ||
| flange | GND | RF ground |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| LDMOS 2-stage integrated Doherty MMIC | Data sheet | 2018-09-29 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM8D1822S-50PB(G) (Data sheet) | Design support | 2018-10-19 |