BLM7G1822S-40PBG
Download datasheetBLM7G1822S-40PBG
Download datasheetLDMOS 2-stage power MMIC
The BLM7G1822S-40PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
Features and benefits
- Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
- High section-to-section isolation enabling multiple combinations
- Integrated temperature compensated bias
- Biasing of individual stages is externally accessible
- Integrated ESD protection
- Excellent thermal stability
- High power gain
- On-chip matching for ease of use
- For RoHS compliance see the product details on the Ampleon website
Applications
RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
- Dual section or single ended
- Doherty
- Quadrature combined
- Push-pull
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 40 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 4 W; VDS = 28 V; f = 2167.5 MHz | 30 | 31.5 | 33 | dB |
| Gp | power gain | PL(AV) = 4 W; VDS = 28 V; f = 1807.5 MHz | 31 | dB | ||
| RLin | input return loss | VDS = 28 V; f = 2167.5 MHz; IDq = 40 mA; IDq2 = 120 mA | -15 | -10 | dB | |
| ηD | drain efficiency | PL(AV) = 4 W; VDS = 28 V; f = 1807.5 MHz; IDq = 40 mA; IDq2 = 120 mA | 24.5 | % | ||
| ηD | drain efficiency | PL(AV) = 4 W; VDS = 28 V; f = 2167.5 MHz; IDq = 40 mA; IDq2 = 120 mA | 22 | 25 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 4 W; VDS = 28 V; f = 2167.5 Hz; IDq = 40 mA; IDq2 = 120 mA | -38.5 | -36.5 | dBc | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 4 W; VDS = 28 V; f = 1807.5 Hz; IDq = 40 mA; IDq2 = 120 mA | -40.5 | dBc | ||
| PARo | output peak-to-average ratio | f = 1807.5 MHz | 8 | dB | ||
| PARo | output peak-to-average ratio | f = 2167.5 MHz | 7.2 | 7.7 | dB | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM7G1822S-40PBG | SOT1212-3 (SOT1212-3) |
sot1212-3_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLM7G1822S-40PBGY (9349 601 57518) |
|
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLM7G1822S-40PBGYZ (9349 601 57535) |
The variants in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM7G1822S-40PBG | SOT1212-3 (SOT1212-3) |
sot1212-3_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM7G1822S-40PBGY (9340 680 87518) |
|
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM7G1822S-40PBGY (9349 601 30518) |
||||
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLM7G1822S-40PBGYZ (9349 601 30535) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS(A1) | drain-source voltage of stage A1 |
|
|
| 2 | VGS(A2) | gate source voltage of stage A2 | ||
| 3 | VGS(A1) | gate-source voltage of stage A1 | ||
| 4 | RF_IN_A | RF input section A | ||
| 5 | n.c. | not connected | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | RF_IN_B | RF input section B | ||
| 12 | VGS(B1) | gate-source voltage of stage B1 | ||
| 13 | VGS(B2) | gate-source voltage of stage B2 | ||
| 14 | VDS(B1) | drain-source voltage of stage B1 | ||
| 15 | RF_OUT_B/VDS(B2) | RF output section B / drain source voltage of stage B2 | ||
| 16 | RF_OUT_A/VDS(A2) | RF output section A / drain source voltage of stage A2 | ||
| flange | GND | RF ground |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| LDMOS 2-stage power MMIC | Data sheet | 2018-09-28 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM7G1822S-40PB(G) (Data sheet) | Design support | 2018-10-18 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |