BLF7G22L-100P
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BLF7G22L-100P
Download datasheetPower LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2000 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 100 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 20 W; VDS = 28 V | 17.8 | 19.1 | dB | |
| RLin | input return loss | PL(AV) = 20 W; VDS = 28 V; IDq = 720 mA | -16 | -9 | dB | |
| ηD | drain efficiency | PL(AV) = 20 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 720 mA | 24 | 28.5 | % | |
| PL(AV) | average output power | 20 | W | |||
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 20 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 720 mA | -34 | -28 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G22L-100P | CDFM4 (SOT1121A) |
sot1121a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G22L-100P,118 (9340 656 95118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G22L-100P,112 (9340 656 95112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | DRAIN1 | drain 1 |
|
|
| 2 | DRAIN2 | drain 2 | ||
| 4 | GATE1 | gate 1 | ||
| 5 | GATE2 | gate 2 | ||
| 5 | SOURCE | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G22L(S)-100P (Data sheet) | Design support | 2012-02-24 |