BLF7G20LS-140P
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF7G20LS-140P
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLC8G21LS-160AV
The replacement is: BLC8G21LS-160AV
Power LDMOS transistor
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
Features and benefits
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Excellent ruggedness
- Integrated ESD protection
- High efficiency
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Low Rth providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for base stations and multi carrier applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 140 | W | |||
| Test signal: GSM EDGE | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 28 V | 16.3 | 17.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 28 V; IDq = 850 mA | -15 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 28 V; 1800 MHz ≤ f ≤ 2000 MHz; IDq = 850 mA | 37 | 41 | % | |
| PL(AV) | average output power | 60 | W | |||
| ACPR600k | adjacent channel power ratio (600 kHz) | PL(AV) = 60 W; VDS = 28 V; 1800 MHz ≤ f ≤ 2000 MHz; IDq = 850 mA | -75 | -69.5 | dBc | |
| ACPR400k | adjacent channel power ratio (400 kHz) | PL(AV) = 60 W; VDS = 28 V; 1800 MHz ≤ f ≤ 2000 MHz; IDq = 850 mA | -61 | -56.5 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G20LS-140P | CDFM4 (SOT1121B) |
sot1121b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G20LS-140P,118 (9340 644 44118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G20LS-140P,112 (9340 644 44112) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| BLF7G20LS-140P | 9340 644 44118 | 2017-03-31 | 2017-06-30 | BLC8G21LS-160AV | 201606001DN | Full Withdrawal | |
| BLF7G20LS-140P | 9340 644 44112 | 2017-03-31 | 2017-06-30 | BLC8G21LS-160AV | 201606001DN | Full Withdrawal |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G20LS-140P (Data sheet) | Design support | 2012-02-24 |