BLF7G20L-200
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF7G20L-200
Download datasheetPower LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz
Features and benefits
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Excellent ruggedness
- Integrated ESD protection
- High efficiency
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Low Rth providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for W-CDMA base stations and multicarrier applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 1990 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 200 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 55 W; VDS = 28 V | 17 | 18 | dB | |
| RLin | input return loss | PL(AV) = 55 W; VDS = 28 V; IDq = 1620 mA | -10 | dB | ||
| ηD | drain efficiency | PL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1620 mA | 30 | 33 | % | |
| PL(AV) | average output power | 55 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1620 mA | -29 | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G20L-200 | SOT502A (SOT502A) |
sot502a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G20L-200,118 (9340 645 83118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G20L-200,112 (9340 645 83112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |