BLF6G22LS-40P
Download datasheetPower LDMOS transistor
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Integrated ESD protection
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- RF power amplifiers for base stations
- Multi carrier applications in the 2110 MHz to 2170 MHz frequency band
- RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 40 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 13.5 W; VDS = 28 V [0] | 17.8 | 19 | dB | |
| RLin | input return loss | PL(AV) = 13.5 W; VDS = 28 V; IDq = 410 mA [0] | -15 | -9 | dB | |
| ηD | drain efficiency | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | 26.5 | 30 | % | |
| PL(AV) | average output power | [0] | 13.5 | W | ||
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | -30 | -27 | dBc | |
| ACPR10M | adjacent channel power ratio (10 MHz) | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | -39 | -36 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF6G22LS-40P | CDFM4 (SOT1121B) |
sot1121b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22LS-40P,118 (9340 653 26118) |
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G22LS-40P,112 (9340 653 26112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-02-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |