BLF6G22L-40P
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G22L-40P
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLM7G1822S-40PB
The replacement is: BLM7G1822S-40PB
Power LDMOS transistor
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Integrated ESD protection
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- RF power amplifiers for base stations
- Multi carrier applications in the 2110 MHz to 2170 MHz frequency band
- RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2110 | 2170 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 40 | W | |||
Test signal: 2-c WCDMA | ||||||
Gp | power gain | VDS = 28 V; PL(AV) = 13.5 W [0] | 17.8 | 19 | dB | |
RLin | input return loss | PL(AV) = 13.5 W; VDS = 28 V; IDq = 410 mA [0] | -15 | -9 | dB | |
ηD | drain efficiency | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | 26.5 | 30 | % | |
PL(AV) | average output power | [0] | 13.5 | W | ||
ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | -30 | -27 | dBc | |
ACPR10M | adjacent channel power ratio (10 MHz) | PL(AV) = 13.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA [0] | -39 | -36 | dBc |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLF6G22L-40P | CDFM4 (SOT1121A) |
sot1121a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22L-40P,118 (9340 653 25118) |
|
Bulk Pack | Withdrawn | Standard Marking |
BLF6G22L-40P,112 (9340 653 25112) |
Discontinuation information
Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
---|---|---|---|---|---|---|---|
BLF6G22L-40P | 9340 653 25118 | 2016-03-31 | 2016-06-30 | BLM7G1822S-40PB | 201506035DN | Full Withdrawal | Replacement: BLF6G22LS-40P or BLM7G1822S-40PB(G) |
BLF6G22L-40P | 9340 653 25112 | 2016-03-31 | 2016-06-30 | BLM7G1822S-40PB | 201506035DN | Full Withdrawal | Replacement: BLF6G22LS-40P or BLM7G1822S-40PB(G) |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D1 | drain1 | ||
2 | D2 | drain2 | ||
3 | G1 | gate1 | ||
4 | G2 | gate2 | ||
5 | S | source |
Documentation
Title | Type | Date | |
---|---|---|---|
Power LDMOS transistor | Data sheet | 2015-12-07 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |