BLF6G20-75
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G20-75
Download datasheetPower LDMOS transistor
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
- Multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 75 | W | |||
| Test signal: GSM EDGE | ||||||
| Gp | power gain | PL(AV) = 29.5 W; VDS = 28 V | 17.5 | 19 | dB | |
| RLin | input return loss | PL(AV) = 29.5 W; VDS = 28 V; IDq = 550 mA | -10 | -5.5 | dB | |
| ηD | drain efficiency | PL(AV) = 29.5 W; VDS = 28 V; 1930 MHz < f < 1990 MHz; IDq = 550 mA | 33.5 | 37.5 | % | |
| PL(AV) | average output power | 29.5 | W | |||
| ACPR400k | adjacent channel power ratio | PL(AV) = 29.5 W; VDS = 28 V; 1930 MHz < f < 1990 MHz; IDq = 550 mA | -61.5 | -59.5 | dBc | |
| ACPR600k | adjacent channel power ratio | PL(AV) = 29.5 W; VDS = 28 V; 1930 MHz < f < 1990 MHz; IDq = 550 mA | -73 | -69.5 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G20-75 | SOT502A (SOT502A) |
sot502a_po | Bulk Pack | Withdrawn | Standard Marking |
BLF6G20-75,112 (9340 612 49112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
No documentation available.