BLF6G20-180PN
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G20-180PN
Download datasheetPower LDMOS transistor
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Qualified up to a supply voltage of 32 V
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 180 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 50 W; VDS = 32 V [0] | 16.8 | 18 | 19.2 | dB |
| RLin | input return loss | PL(AV) = 50 W; VDS = 32 V; IDq = 1600 mA [0] | -10 | -6.5 | dB | |
| ηD | drain efficiency | PL(AV) = 50 W; VDS = 32 V; 1805 MHz < f < 1880 MHz; IDq = 1600 mA [0] | 26 | 29.5 | % | |
| PL(AV) | average output power | 50 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 50 W; VDS = 32 V; 1805 MHz < f < 1880 MHz; IDq = 1600 mA [0] | -35 | -33 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G20-180PN | SOT539A (SOT539A) |
sot539a_po | Bulk Pack | Withdrawn | Standard Marking |
BLF6G20-180PN,112 (9340 612 75112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |