BLF6G15L-250PBRN
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G15L-250PBRN
Download datasheetPower LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1450 MHz to 1550 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
- Intergrated current sense
Applications
- RF power amplifiers for GSM, GSM EDGE, CDMA and W-CDMA
- Multi carrier applications in the 1450 MHz to 1550 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1450 | 1550 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 28 V | 16.5 | 18.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 28 V; IDq = 1410 mA | -12 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA | 30 | 33 | % | |
| PL(AV) | average output power | 60 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 60 W; VDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA | -32 | -27 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G15L-250PBRN | CDFM8 (SOT1110A) |
sot1110a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G15L-250PBRN:1 (9340 643 01118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G15L-250PBRN,1 (9340 643 01112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source | ||
| 6 | SD | sense drain | ||
| 7 | SD | sense drain | ||
| 8 | SG | sense gate | ||
| 9 | SG | sense gate |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF6G15L-250PBRN (AN10923) | Design support | 2012-02-24 |