BLC10G22XS-603AVT
Download datasheetBLC10G22XS-603AVT
Download datasheetPower LDMOS transistor
600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects and minimum IDq drift providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 600 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 115 W [0] | 30 | V | ||
| Gp | power gain | PL(AV) = 115 W [0] | 14.5 | 15.4 | dB | |
| RLin | input return loss | PL(AV) = 115 W [0] | -20 | -12 | dB | |
| ηD | drain efficiency | PL(AV) = 115 W [0] | 44 | 47.5 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 115 W [0] | -32.5 | -28 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC10G22XS-603AVT | DFM6 (SOT1258-4) |
sot1258-4_po | Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC10G22XS-603AVTZ (9349 605 16517) |
|
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC10G22XS-603AVTY (9349 605 16518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | DP | drain (peak) |
|
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| 2 | DM | drain (main) | ||
| 3 | GM | gate (main) | ||
| 4 | GP | gate (peak) | ||
| 5 | S | source | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2021-10-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Recommended line-up
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC10G22XS-603AVT (Data sheet) | Design support | 2021-10-12 | |
| BLC10G22XS-603AVT Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-05-22 |