BLC10G22XS-551AVT
Download datasheetBLC10G22XS-551AVT
Download datasheetPower LDMOS transistor
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2100 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2100 MHz to 2200 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2110 | 2170 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 550 | W | |||
Test signal: 1-c W-CDMA | ||||||
VDS | drain-source voltage | 2110 to 2170 MHz [0] | 29 | V | ||
Gp | power gain | 2110 to 2170 MHz [0] | 15.9 | dB | ||
ηD | drain efficiency | 2110 to 2170 MHz [0] | 50.5 | % | ||
PL(AV) | average output power | 2110 to 2170 MHz [0] | 90 | W | ||
ACPR | adjacent channel power ratio | 2110 to 2170 MHz [0] | -28.5 [1] | dBc | ||
Test signal: 1-c W-CDMA | ||||||
VDS | drain-source voltage | 2110 to 2170 MHz [0] | 32 | V | ||
Gp | power gain | 2110 to 2170 MHz [0] | 16.3 | dB | ||
ηD | drain efficiency | 2110 to 2170 MHz [0] | 49.8 | % | ||
PL(AV) | average output power | 2110 to 2170 MHz [0] | 115 | W | ||
ACPR | adjacent channel power ratio | 2110 to 2170 MHz [0] | -29.1 [1] | dBc |
Package / Packing
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLC10G22XS-551AVT | DFM6 (SOT1258-4) |
sot1258-4_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC10G22XS-551AVTY (9349 601 60518) |
|
Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC10G22XS-551AVTZ (9349 601 60517) |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D2P | drain2 (peak) | ||
2 | D1M | drain1 (main) | ||
3 | G1M | gate1 (main) | ||
4 | G2P | gate2 (peak) | ||
5 | S | source | ||
6 | VDP | video decoupling (peak) | ||
7 | VDM | video decoupling (main) |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
BLC10G22XS-551AVT | 9349 601 60518 | BLC10G22XS-551AVTY | DigiKey | Buy | Not available |
RFMW | Buy | ||||
BLC10G22XS-551AVT | 9349 601 60517 | BLC10G22XS-551AVTZ | DigiKey | Buy | Request samples |
RFMW | Buy |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
BLC10G22XS-551AVT | 9349 601 60518 | BLC10G22XS-551AVTY | DigiKey | Buy | Not available |
RFMW | Buy | ||||
BLC10G22XS-551AVT | 9349 601 60517 | BLC10G22XS-551AVTZ | DigiKey | Buy | Request samples |
RFMW | Buy |
Documentation
Title | Type | Date | |
---|---|---|---|
Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
Power LDMOS transistor | Data sheet | 2019-11-07 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Recommended line-up
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) BLC10G22XS-551AVT (Data sheet) | Design support | 2019-11-07 | |
BLC10G22XS-551AVT Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-05-22 |