BLP9H10S-850AVT
Download datasheetBLP9H10S-850AVT
Download datasheetPower LDMOS transistor
850 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 617 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 617 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 617 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 850 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 120 W [0] | 48 | V | ||
| Gp | power gain | PL(AV) = 120 W [0] | 16.8 | 17.8 | dB | |
| ηD | drain efficiency | PL(AV) = 120 W [0] | 46 | 51 | % | |
| RLin | input return loss | PL(AV) = 120 W [0] | -14 | -9 | dB | |
| ACPR | adjacent channel power ratio | PL(AV) = 120 W [0] | -33 | -28 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP9H10S-850AVT | OMP-1230-6F-1 (OMP-1230-6F-1) |
omp-1230-6f-1_po | Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLP9H10S-850AVTZ (9349 604 80517) |
|
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLP9H10S-850AVTY (9349 604 80518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G1 | gate1 |
|
|
| 2 | G2 | gate2 | ||
| 3 | VD | video decoupling | ||
| 4 | D2 | drain2 | ||
| 5 | D1 | drain1 | ||
| 6 | VD | video decoupling | ||
| 7 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLP9H10S-850AVT | 9349 604 80517 | BLP9H10S-850AVTZ | RFMW | Buy | Not available |
| BLP9H10S-850AVT | 9349 604 80518 | BLP9H10S-850AVTY | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLP9H10S-850AVT | 9349 604 80517 | BLP9H10S-850AVTZ | RFMW | Buy | Not available |
| BLP9H10S-850AVT | 9349 604 80518 | BLP9H10S-850AVTY | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2022-05-25 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Recommended line-up
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLP9H10S-850AVT (Data sheet) | Design support | 2022-05-25 | |
| BLP9H10S-850AVT Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-05-22 |