Power LDMOS transistor

30 W plastic LDMOS power transistor for base station applications at frequencies from 616 MHz to 960 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • FDD/TDD LTE
  • GSM EDGE
  • CDMA
  • W-CDMA
  • MC-GSM
  • WiMAX

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP9H10-30G

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 616 960 MHz
PL(3dB) nominal output power at 3 dB gain compression 30 W
Test signal: Pulsed CW
VDS drain-source voltage PL(AV) = 32 dBm [0] 50 V
Gp power gain PL(AV) = 32 dBm [0] 17.3 18.3 dB
RLin input return loss PL(AV) = 32 dBm [0] -25 -15 dB
ηD drain efficiency PL(AV) = 32 dBm [0] 10 13.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP9H10-30G TO270
(SOT1483-1)
sot1483-1_po Reel 7" Q1/T1 in Drypack Active Standard Marking BLP9H10-30GZ
(9349 601 23515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source [1]

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP9H10-30G 9349 601 23515 BLP9H10-30GZ DigiKey Buy Request samples
RFMW Buy
Mouser Buy

Design support