BLP9H10-30G
Download datasheetBLP9H10-30G
Download datasheetPower LDMOS transistor
30 W plastic LDMOS power transistor for base station applications at frequencies from 616 MHz to 960 MHz.
Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- High power gain
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- FDD/TDD LTE
- GSM EDGE
- CDMA
- W-CDMA
- MC-GSM
- WiMAX
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 616 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 30 | W | |||
| Test signal: 1-c W-CDMA @ 616 to 746 MHz | ||||||
| VDS | drain-source voltage | 616 to 746 MHz [0] | 50 | V | ||
| Gp | power gain | 616 to 746 MHz [0] | 20.2 | dB | ||
| ηD | drain efficiency | 616 to 746 MHz [0] | 15.1 | % | ||
| ACPR | adjacent channel power ratio | 616 to 746 MHz [0] | -49.4 [1] | dBc | ||
| Test signal: 1-c W-CDMA @ 791 to 821 MHz | ||||||
| VDS | drain-source voltage | 791 to 821 MHz [4] | 50 | V | ||
| Gp | power gain | 791 to 821 MHz [4] | 19.5 | dB | ||
| ηD | drain efficiency | 791 to 821 MHz [4] | 13.8 | % | ||
| ACPR | adjacent channel power ratio | 791 to 821 MHz [4] | -47.3 [5] | dBc | ||
| Test signal: 1-c W-CDMA @ 758 to 960 MHz | ||||||
| VDS | drain-source voltage | 758 to 960 MHz [2] | 50 | V | ||
| Gp | power gain | 758 to 960 MHz [2] | 18.7 | dB | ||
| ηD | drain efficiency | 758 to 960 MHz [2] | 12.7 | % | ||
| ACPR | adjacent channel power ratio | 758 to 960 MHz [2] | -51.1 [3] | dBc | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP9H10-30G | TO270 (SOT1483-1) |
sot1483-1_po | Reel 7" Q1/T1 in Drypack | Active | Standard Marking |
BLP9H10-30GZ (9349 601 23515) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLP9H10-30G | 9349 601 23515 | BLP9H10-30GZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLP9H10-30G | 9349 601 23515 | BLP9H10-30GZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2018-07-20 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLP9H10-30G (Data sheet) | Design support | 2018-07-23 | |
| BLP9H10-30G Model for ADS (Keysight Advanced Design System) | Simulation model | 2022-09-21 |