BLF6G10LS-260PRN
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G10LS-260PRN
Download datasheetPower LDMOS transistor
260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
- Multi carrier applications in the 700 MHz to 1000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 700 | 1000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 260 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 40 W; VDS = 28 V [0] | 19.8 | 22 | dB | |
| RLin | input return loss | PL(AV) = 40 W; VDS = 28 V; IDq = 1800 mA [0] | -10 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 40 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 1800 mA [0] | 25 | 26.5 | % | |
| PL(AV) | average output power | [0] | 40 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 40 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 1800 mA [0] | -39 | -35 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G10LS-260PRN | SOT539B (SOT539B) |
sot539b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G10LS-260PRN,1 (9340 644 51118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G10LS-260PRN:1 (9340 644 51112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
No documentation available.