BLC9H10XS-505A
Download datasheetBLC9H10XS-505A
Download datasheetPower LDMOS transistor
500 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 617 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internal integrated wideband input matching for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 617 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 617 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 500 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 85 W [0] | 48 | V | ||
| Gp | power gain | PL(AV) = 85 W [0] | 16.8 | 18.2 | dB | |
| ηD | drain efficiency | PL(AV) = 85 W [0] | 46 | 50 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 85 W [0] | -33 | -28 | dBc | |
| RLin | input return loss | PL(AV) = 85 W [0] | -17 | -13 | dB | |
Package / Packing
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC9H10XS-505A | SOT1273-1 (SOT1273-1) |
sot1273-1_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC9H10XS-505AY (9349 602 62518) |
| Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC9H10XS-505AZ (9349 602 62517) |
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| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC9H10XS-505AYZ (9349 602 62535) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
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| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source [1] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2020-03-10 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-02-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9H10XS-505A (Data sheet) | Design support | 2020-03-10 | |
| BLC9H10XS-505A Model for ADS (Keysight Advanced Design System) | Simulation model | 2020-05-22 |