BLC9H10XS-300P
Download datasheetBLC9H10XS-300P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
300 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.
Features and benefits
- 50 V operation voltage
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 600 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 300 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 925 to 960 MHz [0] | 48 | V | ||
| Gp | power gain | 925 to 960 MHz [0] | 21 | dB | ||
| ηD | drain efficiency | 925 to 960 MHz [0] | 34 | % | ||
| ACPR | adjacent channel power ratio | 925 to 960 MHz [0] | -47 [1] | dBc | ||
| PL(AV) | average output power | 925 to 960 MHz [0] | 60 | W | ||
| IDq | quiescent drain current | 925 to 960 MHz [0] | 1000 | mA | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9H10XS-300P | SOT1273-1 (SOT1273-1) |
sot1273-1_po | Reel 13" Q1/T1 in Drypack | Transferred | Standard Marking |
BLC9H10XS-300PY (9349 601 06518) |
|
| Tray, NonBakeable, Multiple in Drypack | Transferred | Standard Marking |
BLC9H10XS-300PZ (9349 601 06517) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2018-05-29 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9H10XS-300P (Data sheet) | Design support | 2018-05-31 |