BLC8G09XS-400AVT
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G09XS-400AVT
Download datasheetPower LDMOS transistor
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High-efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 791 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 791 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 400 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 791–821 MHz [0] | 32 | V | ||
| Gp | power gain | 791–821 MHz [0] | 17.2 | dB | ||
| ηD | drain efficiency | 791–821 MHz [0] | 46 | % | ||
| ACPR | adjacent channel power ratio | 791–821 MHz [0] | -34 [1] | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G09XS-400AVT | DFM6 (SOT1258-4) |
sot1258-4_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLC8G09XS-400AVTY (9349 600 58518) |
|
| Tray, NonBakeable, Multiple in Drypack | Withdrawn | Standard Marking |
BLC8G09XS-400AVTZ (9349 600 58517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
|
| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-11-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC8G09XS-400AVT (Data sheet) | Design support | 2018-04-23 |