Power LDMOS transistor

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Accelerator applications at the frequency of 1.3 GHz

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF13H9L750P

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 750 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 750 W [0] 50 V
Gp power gain PL = 750 W [0] 16.6 19 dB
ηD drain efficiency PL = 750 W [0] 55 62 %
RLin input return loss PL = 750 W [0] -10 dB
Pdroop(pulse) pulse droop power PL = 750 W [0] 0 0.3 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF13H9L750P SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF13H9L750PU
(9349 601 76112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source [1]

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF13H9L750P 9349 601 76112 BLF13H9L750PU DigiKey Buy Request samples
RFMW Buy
Mouser Buy

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