This device has been transferred from Ampleon to Rochester Electronics.

HF/VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor

Features and benefits

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Industrial and military applications in the HF/VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 108 MHz
PL(1dB) nominal output power at 1 dB gain compression 150 W
Test signal: CW
Gp power gain PL = 150 W; VDS = 50 V; f = 108 MHz; IDq = 100 mA 19 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 100 mA 70 %
PL output power 150 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF177 CRFM4
(SOT121B)
sot121b_po Bulk Pack Transferred Standard Marking BLF177,112
(9339 300 10112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF177 9339 300 10112 BLF177,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF177 9339 300 10112 BLF177,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF177 50V100mA S-parameter Data S-parameter 2012-06-08
BLF177 25V 100mA S-parameter Data S-parameter 2012-06-08