BLF175

BLF175

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This device has been transferred from Ampleon to Rochester Electronics.

This device has been transferred from Ampleon to Rochester Electronics.

HF/VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Features and benefits

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the HF/VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 108 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 50 V; f = 108 MHz; IDq = 30 mA 20 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 30 mA 65 %
PL output power 30 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF175 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF175,112
(9339 397 80112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF175 9339 397 80112 BLF175,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF175 50 V 150 mA S-parameter data S-parameter 2012-06-08
BLF175 25 V 150 mA S-parameter data S-parameter 2012-06-08