BLF244

BLF244

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This device has been transferred from Ampleon to Rochester Electronics.

This device has been transferred from Ampleon to Rochester Electronics.

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 25 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 15 W
Test signal: CW
Gp power gain PL = 15 W; VDS = 28 V 13 17 dB
ηD drain efficiency PL = 15 W; VDS = 28 V; f = 175 MHz; IDq = 25 mA 50 65 %
PL output power 15 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF244 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF244,112
(9338 170 40112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S source
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF244 9338 170 40112 BLF244,112 Rochester Electronics Buy Not available

Design support