BLF145

BLF145

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This device has been transferred from Ampleon to Rochester Electronics.

This device has been transferred from Ampleon to Rochester Electronics.

HF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Good thermal stability
  • Withstand full load mismatch.

Applications

  • SSB transmitter applications in the HF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 30 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 28 V; f = 28 MHz; IDq = 1.3 A 20 dB
ηD drain efficiency VDS = 28 V; f = 28 MHz; IDq = 1.3 A 40 %
IMD3 third-order intermodulation distortion VDS = 28 V; IDq = 1.3 A [0] -43 -40 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF145 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF145,112
(9338 170 70112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF145 9338 170 70112 BLF145,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF145 14 V 250 mA S-parameter data S-parameter 2012-06-08
BLF145 28 V 250 mA S-parameter data S-parameter 2012-06-08