BLF521

BLF521

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This device has been transferred from Ampleon to Rochester Electronics.

This device has been transferred from Ampleon to Rochester Electronics.

UHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

Features and benefits

  • High power gain
  • Easy power control
  • Gold metallization
  • Good thermal stability
  • Withstands full load mismatch
  • Designed for broadband operation.

Applications

  • Transmitter applications in the UHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 100 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 2 W
Test signal: CW
Gp power gain PL = 2 W; VDS = 12.5 V 10 13 dB
ηD drain efficiency VDS = 12.5 V; f = 500 MHz; IDq = 10 mA 50 60 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF521 CRDB4
(SOT172D)
sot172d_po Bulk Pack Transferred Standard Marking BLF521,112
(9339 785 00112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 G gate
3 D drain
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF521 9339 785 00112 BLF521,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF521 12 5 V 10 mA S-parameter data S-parameter 2012-06-08
BLF521 6 25 V 10 mA S-parameter data S-parameter 2012-06-08