This device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
160 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.
Features and benefits
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range
Parametrics
| Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
|
frange
|
frequency range
|
|
600
|
|
960
|
MHz
|
|
PL(3dB)
|
nominal output power at 3 dB gain compression
|
|
|
160
|
|
W
|
| Test signal: Pulsed, class-AB |
|
VDS
|
drain-source voltage
|
860 MHz
[0]
|
|
28
|
|
V
|
|
Gp
|
power gain
|
860 MHz
[0]
|
|
20
|
|
dB
|
|
ηD
|
drain efficiency
|
860 MHz
[0]
|
|
62
|
|
%
|
|
IDq
|
quiescent drain current
|
860 MHz
[0]
|
|
100
|
|
mA
|
Package / Packing
|
Type number
|
Package |
Outline version |
Reflow-/Wave
soldering |
Packing
|
Product status |
Marking
|
Orderable part number,
(Ordering code (12NC))
|
| BLP7G10S-160P |
HSOP4F
(SOT1223-2) |
sot1223-2_po
|
|
Reel 13" Q1/T1 in Drypack
|
Transferred
|
Standard Marking
|
BLP7G10S-160PY
(9349 601 91518)
|
Pinning info
| Pin |
Symbol |
Description |
Simplified outline |
Graphic symbol |
|
1
|
G1
|
gate 1
|
|
|
|
2
|
G2
|
gate 2
|
|
3
|
D2
|
drain 2
|
|
4
|
D1
|
drain 1
|
|
5
|
SOURCE
|
source
|
Ordering & availability
|
Type number
|
Ordering code (12NC)
|
Orderable part number
|
Distributor
|
Buy online
|
Samples
|
| BLP7G10S-160P |
9349 601 91518 |
BLP7G10S-160PY |
Flip Electronics |
Buy
|
Not available
|
Ordering & availability
|
Type number
|
Ordering code (12NC)
|
Orderable part number
|
Distributor
|
Buy online
|
Samples
|
| BLP7G10S-160P |
9349 601 91518 |
BLP7G10S-160PY |
Flip Electronics |
Buy
|
Not available
|
