BLF7G20LS-90P
Download datasheetBLF7G20LS-90P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (1427 MHz to 2170 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for base stations and multi carrier applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1427 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 90 | W | |||
| Test signal: GSM EDGE | ||||||
| Gp | power gain | PL(AV) = 40 W; VDS = 28 V | 18.3 | 19.5 | dB | |
| RLin | input return loss | PL(AV) = 40 W; VDS = 28 V; IDq = 550 mA | -15 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | 38 | 41 | % | |
| PL(AV) | average output power | 40 | W | |||
| ACPR600k | adjacent channel power ratio (600 kHz) | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | -74 | -70.5 | dBc | |
| ACPR400k | adjacent channel power ratio (400 kHz) | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | -61 | -58 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G20LS-90P | CDFM4 (SOT1121B) |
sot1121b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF7G20LS-90P,118 (9340 643 44118) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF7G20LS-90P,112 (9340 643 44112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P | Application note | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G20L(S)-90P (Data sheet) | Design support | 2012-02-24 | |
| Printed-Circuit Board (PCB) BLF7G20L(S)-90P & BLF7G21L(S)-160P (AN10951) | Design support | 2012-02-24 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |